General Office of Fujian Provincial People's Government Information Industry Department and othe
fecha:2011-05-18 10:12
estado:para resolver
pregunta:admin
front of the key technologies, such as gallium nitride (GaN )-based LED with high concentrations of P-type doping and the effective P-type ohmic contact with good preparation, with the development of photonic crystal LED, GaN growth on the alumina substrate (GaN/Al2O3) the results of wafer peeling Three-color high-performance phosphor, anti-static high-power flip-white LED, fine metallurgical production of solar grade polysilicon, high efficiency solar cells. After thorough market research, bas
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